P30NF10 is apower MOSFET is the latest development of STMicroelectronis unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features:-
• Exceptional dv/dt capability
• 100% avalanche tested
• Application oriented characterization
• Switching application
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 35A |
| Drain-Source Resistance (Rds On) | 0.045Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 55 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 115W |
Based on 0 reviews
Only logged in customers who have purchased this product may leave a review.
There are no reviews yet.